发明名称 |
APPARATUS AND METHOD FOR PLASMA ETCHING |
摘要 |
A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
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申请公布号 |
US2007184563(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070735657 |
申请日期 |
2007.04.16 |
申请人 |
MIYA GO;EDAMURA MANABU;YOSHIOKA KEN;NISHIO RYOJI |
发明人 |
MIYA GO;EDAMURA MANABU;YOSHIOKA KEN;NISHIO RYOJI |
分类号 |
H01L21/00;H01L21/3065;H01J37/32;H01L21/302;H01L21/306 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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