发明名称 SAMPLE SURFACE INSPECTION DEVICE AND INSPECTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a defect inspection device having unprecedented high accuracy, in a defect inspection device of a manufacturing process of a semiconductor device; and to provide a defect inspection (or evaluation) method. <P>SOLUTION: In this method for inspecting a sample surface by a mapping type electron beam inspection device, the size of an irradiation region on the sample surface by an electron beam generated from an electron gun 21 is set larger than a pattern size on the sample surface and formed into a generally circular or elliptical shape; the pattern on the sample surface is irradiated nearly at its center with the electron beam; and secondary electrons generated from the sample surface by the irradiation of the electron beam are focused on an electron detection surface of a detector to inspect the sample surface. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007200658(A) 申请公布日期 2007.08.09
申请号 JP20060016553 申请日期 2006.01.25
申请人 EBARA CORP;TOSHIBA CORP 发明人 NOMICHI SHINJI;NAITO YOSHIHIKO;SOFUGAWA TAKUJI;HATAKEYAMA MASAKI;TERAO KENJI;MURAKAMI TAKESHI;OKUMURA KATSUYA;TOUKI TATSUHIKO
分类号 H01J37/29;H01L21/027;H01L21/66 主分类号 H01J37/29
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