发明名称 |
SAMPLE SURFACE INSPECTION DEVICE AND INSPECTION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a defect inspection device having unprecedented high accuracy, in a defect inspection device of a manufacturing process of a semiconductor device; and to provide a defect inspection (or evaluation) method. <P>SOLUTION: In this method for inspecting a sample surface by a mapping type electron beam inspection device, the size of an irradiation region on the sample surface by an electron beam generated from an electron gun 21 is set larger than a pattern size on the sample surface and formed into a generally circular or elliptical shape; the pattern on the sample surface is irradiated nearly at its center with the electron beam; and secondary electrons generated from the sample surface by the irradiation of the electron beam are focused on an electron detection surface of a detector to inspect the sample surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007200658(A) |
申请公布日期 |
2007.08.09 |
申请号 |
JP20060016553 |
申请日期 |
2006.01.25 |
申请人 |
EBARA CORP;TOSHIBA CORP |
发明人 |
NOMICHI SHINJI;NAITO YOSHIHIKO;SOFUGAWA TAKUJI;HATAKEYAMA MASAKI;TERAO KENJI;MURAKAMI TAKESHI;OKUMURA KATSUYA;TOUKI TATSUHIKO |
分类号 |
H01J37/29;H01L21/027;H01L21/66 |
主分类号 |
H01J37/29 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|