发明名称 |
Integrated circuitry, dynamic random access memory cells, and electronic systems |
摘要 |
The invention includes semiconductor processing methods in which openings are formed to extend into a semiconductor substrate, and the substrate is then annealed around the openings to form cavities. The substrate is etched to expose the cavities, and the cavities are substantially filled with insulative material. The semiconductor substrate having the filled cavities therein can be utilized as a semiconductor-on-insulator-type structure, and transistor devices can be formed to be supported by the semiconductor material and to be over the cavities. In some aspects, the transistor devices have channel regions over the filled cavities, and in other aspects the transistor devices have source/drain regions over the filled cavities. The transistor devices can be incorporated into dynamic random access memory, and can be utilized in electronic systems.
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申请公布号 |
US2007181884(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070724787 |
申请日期 |
2007.03.15 |
申请人 |
BLOMILEY ERIC R;DREWES JOEL A;RAMASWAMY D V N |
发明人 |
BLOMILEY ERIC R.;DREWES JOEL A.;RAMASWAMY D.V. N. |
分类号 |
H01L27/108;H01L29/00;H01L31/036;H01L31/112 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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