| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve simultaneously a stable write operation during writing and an accelerated reading operation or prevention of malfunction when a part of a memory cell connected to the same word line is written. <P>SOLUTION: The device has a pair of inverters (P1 and N1, P2 and N2), a feed control switch P3 connected between the feeding point NDdd of the pair of inverters and a power supply voltage supply line 4, and a boosting device (capacitor 5) configured to boost voltage of the feeding point NDdd electrically isolated from the power supply voltage supply line 4 by the feed control switch P3, for each SRAM cell 1A. <P>COPYRIGHT: (C)2007,JPO&INPIT |
