| 摘要 |
Stacked capacitor memory is realized, wherein a capacitor stores data and a diode serves as an access device instead of MOS transistor, the first terminal is connected to a word line, the second terminal is connected to the first electrode of the capacitor which serves as a storage node while the second electrode is connected to a plate line, the third terminal is floating, and the fourth terminal is connected to a bit line. When write, the storage node is charged or not, depending on the conducting state of the diode which is controlled by the bit line. When read, the diode also serves as a sense amplifier to detect whether the storage node is forward bias or not, and it sends binary data to a latch device wherein includes a current mirror and a feedback loop which cuts off the current path after latching, thus it reduces active current, minimizes data pattern sensitivity, and also rejects coupling noise. And dummy rows and columns generate replica delay signals which guarantee timing margin and reduce cycle time. And its applications are extended to single port, multi port and content addressable memory. In addition, the memory cells are formed in between the routing layers, which memory cells can be stacked over the transistor or another capacitor memory cell.
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