| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging element in which the semiconductor substrate voltage can be brought to a low voltage level temporarily in a short pulse width time over a wide pixel region without narrowing the opening in a shielding film on a photodiode, and to provide its driving method. SOLUTION: The solid state imaging element comprises a plurality of photodiodes 3 arranged in array on the surface of a semiconductor substrate 2, a high concentration impurity diffusion layer 14 formed on the light receiving surface of each photodiode 3, a high concentration impurity diffusion layer 18 for isolating each photodiode on the surface of the semiconductor substrate, a means for reading out a signal corresponding to the amount of received light from the photodiode 3, and an electrode layer 31 connected electrically with the high concentration impurity diffusion layer 18. Electronic shutter voltage is lowered by applying a voltage of reverse polarity to that of the electronic shutter voltage for the reference potential to the electrode layer 31 when the electronic shutter voltage is applied to the semiconductor substrate 2. COPYRIGHT: (C)2007,JPO&INPIT |
