| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique that can suppress the particle generation in a film forming method for forming a silicon nitride film on substrate surfaces. SOLUTION: In a series of process steps in which a silicon nitride film is formed on substrates that are held mutually parallel by a substrate holder by supplying a process gas into a reaction vessel while heating inside of the reaction vessel by a heating means, and the substrate holder is then drawn out from the reaction vessel, the substrates before the film forming are held mutually parallel by the substrate holder, and during the period from the start of transferring the substrate holder into the reaction vessel to the closing of the transfer opening of the reaction vessel, the set temperature for controlling the heating means is being raised while the substrate holder is being transferred into the reaction vessel. COPYRIGHT: (C)2007,JPO&INPIT
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