| 摘要 |
A method of manufacturing a flash memory device. An etch process for controlling the effective field height of isolation layers is performed using a dry etch process on condition that an excessive amount of polymer is generated, thus forming first spacers on sidewalls of a floating gate pattern. The first spacers serve as an etch barrier layer when the isolation layers of regions exposed when a control gate and a floating gate are formed subsequently are etched, so that a second spacer is formed on sidewalls of the semiconductor substrate of an active region. Accordingly, exposure and damage of the sidewalls of the semiconductor substrate can be prevented and the reliability of devices can be improved.
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