| 摘要 |
A semiconductor device including inductors with improved reliability and a method of manufacturing the same are provided. The semiconductor device may include a substrate, an insulating film pattern formed on the substrate and having an opening, an amorphous metal nitride film formed inside the opening, a diffusion reducing or preventing film formed on the amorphous metal nitride film, and a conductive film including the diffusion reducing or preventing film filling the inside of the opening.
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