| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a long wavelength band high performance semiconductor light emitting device that is formed on an InP substrate, and also to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor light emitting device 1 is of DH structure in which a clad layer 3 that is an n-type InP, an active layer 4 formed of mixed crystal semiconductor Ga<SB>a</SB>In<SB>1-a</SB>N<SB>b</SB>As<SB>c</SB>P<SB>1-b-c</SB>(0≤a<1, 0<b<1, 0≤c<1) layer, whose lattice is matched with that of the grown substrate 2 that is an InP layer, containing at least N with wavelength of 1.4 μm, a clad layer 5 that is a p-type InP layer, and a cap layer 6 that is a p<SP>+</SP>-type InGaAs layer, are sequentially laminated on the grown substrate 2 formed of an n-type InP layer. Because N is added to the layer 4, lattice constant is small and wavelength is long, in addition, band gap energy is small because of the large electronegativity of N, and band discontinuity in a conduction band increases, overflow in implanted carrier remarkably decreases, and temperature characteristics are improved, as compared with a light emitting device where a GaInAsP/InP based material that is a conventional material is used. <P>COPYRIGHT: (C)2007,JPO&INPIT |
