发明名称 |
MANUFACTURING METHOD FOR COMPOSITE SUBSTRATE WITH IMPROVED ELECTRICAL CHARACTERISTICS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a composite substrate which has at least one thin insulating layer attached between a support substrate and an active layer of a semiconductor material. <P>SOLUTION: The manufacturing method includes steps of: forming or depositing an insulating layer 32 on a source substrate, and in some cases forming or depositing an insulating layer 31 on the support substrate 1; heat recovery treating the insulating layer 32, and in some cases the insulating layer 31 formed on the support substrate 1; plasma activating at least one of two planes to be bonded; bonding two substrates using the molecule bonding such that the insulating layer 32 is located between the support substrate 1 and source substrate; and eliminating a part of the source substrate to retain only a thickness of a material composing the active layer 21. The method manufactures a substrate 4 with improved electrical characteristics. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2007201430(A) |
申请公布日期 |
2007.08.09 |
申请号 |
JP20060333515 |
申请日期 |
2006.12.11 |
申请人 |
SOI TEC SILICON ON INSULATOR TECHNOLOGIES SA |
发明人 |
ALLIBERT FREDERIC;KERDILES SEBASTIEN |
分类号 |
H01L21/02;H01L21/336;H01L27/12;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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