发明名称 MANUFACTURING METHOD FOR COMPOSITE SUBSTRATE WITH IMPROVED ELECTRICAL CHARACTERISTICS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a composite substrate which has at least one thin insulating layer attached between a support substrate and an active layer of a semiconductor material. <P>SOLUTION: The manufacturing method includes steps of: forming or depositing an insulating layer 32 on a source substrate, and in some cases forming or depositing an insulating layer 31 on the support substrate 1; heat recovery treating the insulating layer 32, and in some cases the insulating layer 31 formed on the support substrate 1; plasma activating at least one of two planes to be bonded; bonding two substrates using the molecule bonding such that the insulating layer 32 is located between the support substrate 1 and source substrate; and eliminating a part of the source substrate to retain only a thickness of a material composing the active layer 21. The method manufactures a substrate 4 with improved electrical characteristics. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007201430(A) 申请公布日期 2007.08.09
申请号 JP20060333515 申请日期 2006.12.11
申请人 SOI TEC SILICON ON INSULATOR TECHNOLOGIES SA 发明人 ALLIBERT FREDERIC;KERDILES SEBASTIEN
分类号 H01L21/02;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L21/02
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