| 摘要 |
An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20° C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500° C., and an etch rate in NF<SUB>3 </SUB>at 600° C. of less than 100 A/min.
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