| 摘要 |
<p>Disclosed are a polishing agent for copper-based metals and a polishing method. Specifically disclosed is a polishing composition for copper-based metals, which comprises polishing particles, a borate, an oxidizing agent and water. Also specifically disclosed is a method for polishing a semiconductor substrate, which comprises a step for positioning a semiconductor substrate, a step for polishing the positioned semiconductor substrate with a first polishing composition containing polishing particles, ammonium borate, an oxidizing agent and water and having a pH of 6.5-9, and a step for further polishing the thus-polished semiconductor substrate with a second polishing composition containing polishing particles, potassium borate, an oxidizing agent and water and having a pH of 7-10.</p> |
