| 摘要 |
1,251,757. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 10 Feb., 1969 [13 Feb., 1968 (2)], No. 7070/69. Heading H1K. Beam leads consisting mainly of aluminium projecting laterally from a semi-conductor body are formed by deposition and are underlain in the projecting parts by a layer of insulation integral with that on the semi-conductor body. Typical structures are formed in multiple by first forming the device configurations by planar techniques in an oxide coated silicon body 70Á thick, etching apertures in the oxide at desired contact points and vapour depositing aluminium to form contacts extending therefrom over the oxide. The areas immediately surrounding the areas of contact are then masked with photoresist and the aluminium thickened elsewhere to form beam leads by further deposition using the apparatus described in copending application 7069/69 (Fig. 3, not shown), and finally coated with nickel if the leads are to be soldered. The silicon between the device configurations to be separated is then etched away without affecting the oxide to form bodies interconnected where required by the beam leads. Devices with leads entirely of aluminium can be electrically connected to aluminium tracks on a glass substrate by ultrasonic bonding to form parts of hybrid circuits. Manufacture of single transistors and pairs of transistors with interconnected emitters is described.
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