A complementary metal oxide semiconductor (CMOS) image sensing device includes a semiconductor substrate; a photodiode defined on the substrate; a gate dielectric layer provided over the photodiode and the substrate; a polysilicon interconnect contacting a given area of the photodiode via an opening in the gate dielectric layer; a reset transistor coupled to the photodiode; a source follower transistor coupled to the photodiode; and a select transistor coupled to the source follower transistor. The given area of the photodiode defines a node that is coupled to the reset transistor and source follower transistor.
申请公布号
US2007181922(A1)
申请公布日期
2007.08.09
申请号
US20060615969
申请日期
2006.12.23
申请人
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION