| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a thin-film transistor to be used in an environment where it is exposed in a light. SOLUTION: A light-shielding layer 11 is formed on a substrate 10, and in addition, a buffer film 12 for covering the light-shielding layer 11 is formed. An amorphous silicon layer is formed on the buffer film 12. Laser annealing is executed for the amorphous silicon layer to form a polysilicon layer 13. Subsequently, the polysilicon layer 13 is patterned into a predetermined pattern. In this case, the predetermined pattern is a pattern which has the same shape as that of the light-shielding layer 11, is subtly wider than the light-shielding layer 11 and can cover a first inclined surface 12S of the buffer film 12 in which the step difference of the light-shielding layer 11 is reflected. In this case, a projection 13C due to progress of crystal growth of the polysilicon is not formed on an end of the polysilicon layer 13. Further, a gate insulating film 14 for covering the polysilicon layer 13 and a gate electrode 15 are formed. COPYRIGHT: (C)2007,JPO&INPIT
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