| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method of manufacturing metal film capable of forming metal film suitable as electrically conductive film having a low specific resistance. SOLUTION: In the method of manufacturing the metal film, the substrate is baked after metal nano fine particles dispersed substance is applied to a substrate, in reducing atmosphere such as hydrogen gas at a pressure higher than one atmospheric pressure, thereby forming the metal film. Baking is preferably carried out at temperature of 50 to 200°C. Conventionally, reduction at low temperature has been difficult. Therefore formed metal film tends to have a resistance of high value. The method provides a technology that overcomes the difficulty of reduction at low temperature. COPYRIGHT: (C)2007,JPO&INPIT
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