| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC single crystal by a solution process, by which the flatness of a growing surface can be stably maintained, polycrystallization is inhibited, and consequently the SiC single crystal having a large diameter can be grown. SOLUTION: In the method for growing a hexagonal SiC single crystal from a hexagonal SiC seed crystal held directly below the surface of a melt as a starting point while maintaining such a temperature gradient that the temperature is lowered from the inside of the melt toward the surface of the melt in an Si-melt in a graphite crucible, the SiC single crystal is grown on a surface inclined by a prescribed off-angle from the (0001) plane of the SiC seed crystal toward the [1-100] direction. The off-angle is preferably 1-30°. It is most preferable that the SiC single crystal is grown on the (1-100) plane having an off-angle of 90°. COPYRIGHT: (C)2007,JPO&INPIT
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