| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist underlayer film material which is for a multilayer resist process, especially for a double layer resist process or a triple layer resist process, which functions as an excellent antireflection film especially against exposure with short wavelength light, that is, having high transparency and most suitable n and k values, and further is excellent in etching resistance in substrate working. <P>SOLUTION: The resist underlayer film material which is for a multilayer resist film to be used in lithography, and is characterized by containing at least a compound having a bisnaphthol group and a novolac resin produced therefrom, is provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
