| 摘要 |
A method for forming a transistor of a semiconductor device is provided to improve characteristics of a gate insulating layer and a PMOS transistor by preventing boron penetration by using a nitrogen rich oxynitride layer. A gate oxide layer(19) and a first nitrogen rich oxynitride layer(21) are formed on a semiconductor substrate(11). A polysilicon layer is formed on the first nitrogen rich oxynitride layer. An N+ type and P+ type polysilicon layers are formed by implanting N+ and P+ type impurities. A tungsten silicide layer and a hard mask layer are formed on the entire surface of the semiconductor substrate. An N+ polysilicon gate and a P+ polysilicon gate are formed by etching the hard mask layer, the tungsten silicide layer, the P+ type and N+ type polysilicon layers, the first nitrogen rich oxynitride layer, and the gate oxide layer. An oxide layer is formed on lateral surfaces of the tungsten silicide layer, the first nitrogen rich oxynitride layer, and the gate oxide layer. A second nitrogen rich oxynitride layer is formed on a lateral surface of the oxide layer. A spacer is formed on each sidewall of the N+ polysilicon gate and the P+ polysilicon gate. A source/drain extended region is formed by implanting the impurities into the semiconductor substrate.
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