Methods of making a power MOS transistor and power MOS transistor,申请号EP20060006084-传众专利搜索

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发明名称	Methods of making a power MOS transistor and power MOS transistor
摘要
申请公布号	EP1717865(A3)	申请公布日期	2007.08.08
申请号	EP20060006084	申请日期	2006.03.24
申请人	AMI SEMICONDUCTOR BELGIUM BVBA	发明人	MOENS, PETER;TACK, MARNIX
分类号	H01L29/78;H01L21/336;H01L29/06;H01L29/40;H01L29/41;H01L29/417	主分类号	H01L29/78
代理机构		代理人
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