发明名称 |
Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method |
摘要 |
Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting/controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.
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申请公布号 |
US7254150(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20050502542 |
申请日期 |
2005.02.01 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
YOSHIDA HIROSHI;SATO KAZUNORI |
分类号 |
H01S3/10;H01S5/32;H01S5/00;H01S5/06;H01S5/30;H01S5/343;H01S5/347 |
主分类号 |
H01S3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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