发明名称 Circular polarization spin semiconductor laser using magnetic semiconductor and laser beam generating method
摘要 Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting/controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.
申请公布号 US7254150(B2) 申请公布日期 2007.08.07
申请号 US20050502542 申请日期 2005.02.01
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY 发明人 YOSHIDA HIROSHI;SATO KAZUNORI
分类号 H01S3/10;H01S5/32;H01S5/00;H01S5/06;H01S5/30;H01S5/343;H01S5/347 主分类号 H01S3/10
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