发明名称 |
Non-volatile semiconductor memory devices |
摘要 |
A non-volatile memory device includes a semiconductor substrate, a tunneling insulating layer, a charge storage layer, a blocking insulating layer, and a gate electrode. The tunneling insulating layer is on the substrate and has a first dielectric constant. The charge storage layer is on the tunneling insulating layer. The blocking insulating layer is on the charge storage layer and has a second dielectric constant which is greater than the first dielectric constant of the tunneling insulting layer. The gate electrode is on the blocking insulating layer, and at least a portion of the gate electrode adjacent to the blocking layer has a higher work-function than polysilicon.
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申请公布号 |
US7253467(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20040795537 |
申请日期 |
2004.03.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;YE BYOUNG-WOO |
分类号 |
H01L29/788;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/51;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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