发明名称 |
Low doped layer for nitride-based semiconductor device |
摘要 |
A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.
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申请公布号 |
US7253015(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20040780526 |
申请日期 |
2004.02.17 |
申请人 |
VELOX SEMICONDUCTOR CORPORATION |
发明人 |
POPHRISTIC MILAN;MURPHY MICHAEL;STALL RICHARD A.;SHELTON BRYAN S.;LIU LINLIN;CERUZZI ALEX D. |
分类号 |
H01L21/00;H01L21/28;H01L23/48;H01L23/52;H01L29/15;H01L29/20;H01L29/40;H01L29/45;H01L29/47;H01L29/778;H01L29/872;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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