发明名称 ELECTRON EMISSION DEVICE AND METHOD OF FABRICATING THE SAME
摘要 <p>An electron emission device and a method for fabricating the same are provided to form an electron emission source by growing a carbon nano tube at comparatively low temperature. A cathode electrode(120) is arranged on a base substrate. A gate electrode(140) is disposed on the base substrate and is insulated electrically from the cathode electrode. A first insulating layer(130) is arranged between the cathode electrode and the gate electrode in order to insulate. An electron emission source hole is formed at the first insulating layer and the gate electrode in order to expose the cathode electrode. An electron emission source(150) is disposed within the electron emission source hole in order to be electrically connected to the cathode electrode. The electron emission source includes a catalytic layer(151) formed of an alloy including transition metal and a carbon nano tube(152) mounted on the catalytic layer.</p>
申请公布号 KR20070079475(A) 申请公布日期 2007.08.07
申请号 KR20060010178 申请日期 2006.02.02
申请人 SAMSUNG SDI CO., LTD. 发明人 JEONG, KWANG SEOK
分类号 H01J1/30 主分类号 H01J1/30
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