| 摘要 |
A one time programmable (OTP) electrically programmable read only memory (EPROM) transistor ( 100 ) having an increased breakdown voltage (BVdss) is disclosed. The increased breakdown voltage reduces the probability that the OTP EPROM ( 100 ) will breakdown during a programming operation by maintaining a breakdown voltage above a programming voltage. The breakdown voltage is, at least partially, increased by forming a p-doped region ( 140 ) within a semiconductor substrate ( 102 ), and forming a drain region ( 166 ) of the OTP EPROM ( 100 ) within the p-doped region ( 140 ).
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