发明名称 |
Low-power multiple-channel fully depleted quantum well CMOSFETs |
摘要 |
A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the uppermost channel region, separated by a gate oxide, for example. The vertical stacking of multiple channels and the gate electrode permit increased drive current in a semiconductor device without increasing the silicon area occupied by the device.
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申请公布号 |
US7253484(B2) |
申请公布日期 |
2007.08.07 |
申请号 |
US20060445345 |
申请日期 |
2006.06.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PAN JAMES N.;PELLERIN JOHN G.;CHEEK JON |
分类号 |
H01L27/088;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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