| 摘要 |
<p>A method for manufacturing an electron emission device is provided to improve electron emission characteristics by removing a protective layer including a nitride layer and performing a uniform activation process. A cathode electrode(6) is formed on a substrate(2). An electron emission unit(12) is formed on the cathode electrode by using a carbon-based material. A protective layer(20) including a nitride layer is formed on the cathode electrode and the electron emission unit. An insulating layer(8) and a gate electrode(10) are sequentially formed on the protective layer. Apertures(9,11) are formed in the gate electrode, the insulating layer, and the protective layer and the electron emission unit is exposed by performing a dry-etch process. An activation process is performed. The nitride layer for forming the protective layer is selected from a TiN layer, a TiCN layer, and a CrN layer.</p> |
