| 摘要 |
<P>PROBLEM TO BE SOLVED: To elevate the heating efficiency of a nonvolatile memory element having a recording layer containing a phase-changing material. <P>SOLUTION: The nonvolatile memory element includes a lower electrode 12, an upper electrode 15, a recording layer 13 containing the phase changing material positioned between the lower electrode 12 and the upper electrode 15, and a block layer 14 which can block the phase change of the recording layer. The block layer 14 is composed of a material of an electric resistance higher than that of the recording layer 13. Because the nonvolatile memory element has the block layer 14 capable of blocking the phase change of the recording layer 13, radiation is inhibited to the side of the upper electrode 15, and a phase changing area P is largely limited when a write current is applied. As the result, a high heating efficiency can be obtained. The upper electrode 15 itself is composed as a bit line or a bit line may be located separated from the upper electrode 15. <P>COPYRIGHT: (C)2007,JPO&INPIT |
