InP-BASED SEMICONDUCTOR DEVICE USING GaAs SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To enable to form an InP-based semiconductor element which is inherently lattice matched to an InP substrate on a GaAs substrate. SOLUTION: By forming an InP metamorphic buffer layer 2 having a thickness of 4μm or above and a surface defect density of 108/cm2or less on the GaAs substrate 1, the InP-based semiconductor element 11 having a superior property and a high reliability can be formed on the GaAs substrate. COPYRIGHT: (C)2007,JPO&INPIT