发明名称 |
SEMICONDUCTOR DEVICES HAVING RECESSED STRUCTURES AND METHODS OF FORMING THE SAME |
摘要 |
A method for forming a semiconductor device is provided. The method includes providing a substrate having a plurality of protrusions projecting from the substrate; forming a silicon layer over the substrate and each protrusion; performing an anisotropic etching to transfer the silicon layer into a silicon spacer positioned on a side wall of each protrusion; forming an oxide layer over the silicon spacer; and etching the substrate to form a recess on the substrate by using the oxide layer as a mask.
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申请公布号 |
US2007178647(A1) |
申请公布日期 |
2007.08.02 |
申请号 |
US20060564929 |
申请日期 |
2006.11.30 |
申请人 |
NANYA TECHNOLOGY CORP. |
发明人 |
WU CHIH-HUANG;YANG CHIEN-JUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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