| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation shield which does not bring pollution to a silicon melt even if its lower end is brought into contact with the silicon melt, effectively shields a growing single crystal from radiation heat, and can enhance the single crystal growing speed (pulling speed) in a single crystal pulling apparatus, and to provide a single crystal pulling apparatus equipped with the same. SOLUTION: The radiation shield 6 is used to shield a single crystal C from radiation heat in the single crystal pulling apparatus 1 for pulling the single crystal C while growing it from a silicon melt M in a crucible 3 by a Czochralski method. The radiation shield 6 is provided with: a shield main body 6a disposed so as to surround the periphery of the single crystal C at an upper part of the crucible 3 and is formed of a prescribed heat-shielding material; and a shield lower end part 6b formed of quartz glass and arranged to face to the surface of the silicon melt M at a part lower than the shield main body 6a. COPYRIGHT: (C)2007,JPO&INPIT
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