| 摘要 |
<p>A process for producing a semiconductor device in which a semiconductor device of high performance can be produced through simple processing at low temperature. There is provided a process for producing a semiconductor device having a substrate and, sequentially superimposed thereon, a first insulating film, a semiconductor layer and a second insulating film, which process comprises the steps of forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region of the first insulating film where the hydrogen barrier layer is disposed; incorporating hydrogen in the semiconductor layer; forming a second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is disposed; and performing hydrogenation annealing of the semiconductor layer.</p> |
