发明名称 LEVEL SHIFT CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a level shift circuit of a single end output type in which an increase in a delay time involved in a voltage level shift operation during a low voltage is suppressed and an increase in an occupied area of the circuit is also suppressed. SOLUTION: The level shift circuit is constituted by using a CMOS, wherein first and second inverters (300, 200) are provided of such a type that gates of MOS transistors are individually driven, and the first inverter (300) is used as a level conversion means. A voltage level of a first control signal (CS1) output from an output point (no1) of the first inverter 300 is forcibly reduced by a voltage drop circuit (CONT1), the operation of the second inverter 200 is quickened, and level inversion of an output signal in the first inverter 300 is accelerated as a result. Furthermore, current capabilities of the transistors are optimally balanced, and an increase in the circuit area is suppressed by reducing, in particular, the size of the transistor constituting the second inverter (200). COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007195162(A) 申请公布日期 2007.08.02
申请号 JP20060344951 申请日期 2006.12.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAHIRA SEIJI;MORI TOSHIKI
分类号 H03K19/0185 主分类号 H03K19/0185
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