| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate-type semiconductor device capable of accurately detecting current to a saturated current. SOLUTION: In the trench gate-type semiconductor device, an active cell where a channel is each formed in a main IGBT region and a sense IGBT region and a floating cell where no channel is formed, and the ratio of the main IGBT region, an active cell width La of the sense IGBT region, and a floating cell width Lb is set at a predetermined value to control it so as to allow the main IGBT region and the sense IGBT region to be of similar saturated current characteristics. COPYRIGHT: (C)2007,JPO&INPIT
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