Forming metallization layers for high-density integrated circuit component interconnection, also deposits dielectric material of low permitivity

摘要

An opening is made in a sacrificial layer formed over the substrate (101) of a semiconductor component (111). A metal zone is formed in the opening and the sacrificial layer is then removed. A dielectric material (113) of low permittivity (epsilon) is deposited, embedding the metal zone in it. A conductive layer may be formed before the sacrificial layer, the opening being made to bare the conducting layer. The metal zone covers a region of the conductive layer. In addition, an open region of the conductive layer is removed, before deposition of the dielectric.