| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device having improved embedding property of a conductive film into a channel of trench type gate. <P>SOLUTION: The method for manufacturing semiconductor device comprises the steps of forming, to a substrate, an element isolating part having an inversely tapered cross-section in the perpendicular direction for the substrate surface and surrounding a plurality of active regions to which a transistor is formed, forming an anti-oxidation insulating mask covering source and drain regions of a transistor in a plurality of active regions, forming a channel for trench type gate to the active region by conducting anisotropic etching to the substrate from the upper direction of the anti-oxidation insulating mask, removing a naturally oxidized film formed on the substrate surface of the channel, conducting the annealing process for the heat treatment under the hydrogen atmosphere, removing the anti-oxidation insulating mask, conducting the cleaning process using a solution including ammonia hydrogen peroxide, and forming a gate oxide film on the substrate surface of the channel with a thermal oxidation method. <P>COPYRIGHT: (C)2007,JPO&INPIT |
