发明名称 METHOD FOR PRODUCING HIGH PURITY SILICON
摘要 PROBLEM TO BE SOLVED: To provide a method for producing high purity silicon by which boron is is removed from silicon in order to provide the high purity silicon useful for the production of a solar battery or the like, and also by which the efficiency of a reaction for removing boron is enhanced and the durability of a vessel used for the reaction is improved. SOLUTION: In the method for producing the high purity silicon by removing boron contained in silicon by adding one or both of a carbonate of an alkali metal and hydrate of the carbonate and SiO<SB>2</SB>into a vessel stored with molten silicon to form slag, a vessel made of an oxidation-resistant and non-electroconductive material is used as the vessel used for the boron removing reaction, and the molten silicon is directly heated by an induction heating means while cooling the vessel from outside. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007191347(A) 申请公布日期 2007.08.02
申请号 JP20060010516 申请日期 2006.01.18
申请人 NIPPON STEEL MATERIALS CO LTD 发明人 OKAJIMA MASAKI;OKAZAWA KENSUKE;TOKUMARU SHINJI;KONDO JIRO
分类号 C01B33/037 主分类号 C01B33/037
代理机构 代理人
主权项
地址