| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of improving stably and with high yield the speed of transferring electric charge in a horizontal charge transfer path, and to prevent misalignment in a semiconductor device manufacturing method that includes a process of aligning a mask to an impurity region. SOLUTION: In the semiconductor device manufacturing method, while a resist pattern R1 is left as formed by an alignment mark for forming the impurity region, is partial etching is performed using a resist pattern of a region corresponding to the alignment mark as a mark to form an alignment groove G. The alignment groove G is used as a reference mark for alignment to enable alignment relative to the impurity region. COPYRIGHT: (C)2007,JPO&INPIT
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