| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor wafer to form, on an insulating layer within an SOI wafer, a lattice-relaxed or a partly lattice-relaxed SiGe layer including less amount of defect, and also including uniform and high concentration Ge. SOLUTION: The method for manufacturing semiconductor wafer includes the step of forming a lattice-relaxed or a partly lattice-relaxed SiGe layer 5 on an insulating layer 2 within an SOI wafer 4. In the step of forming the lattice-relaxed SiGe layer 5, heat treatment is conducted under the oxidation atmosphere after at least upper layer side 7 of the SiGe layer 6 is formed on the SOI layer 3 in the gradient of Ge concentration that is gradually reduced toward the surface 7a thereof. COPYRIGHT: (C)2007,JPO&INPIT
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