| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric capacitor which has dielectric characteristics with little change over time. SOLUTION: The dielectric capacitor is provided with: a substrate; a silicon oxide film which is formed on the substrate; a lower electrode which has an iridium layer which is formed on the silicon oxide film and consists of a columnar poly crystal, and an oxidization iridium which is formed between the crystals of the iridium layer which consists of the columnar poly crystal; an oxide dielectric layer which is formed on the lower electrode; and an upper electrode which is formed on the oxide dielectric layer. A platinum layer is formed on the iridium layer which consists of the columnar poly crystal. COPYRIGHT: (C)2007,JPO&INPIT
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