| 摘要 |
A semiconductor device has a plurality of stacked metal layers. The semiconductor device includes a substrate, a gate oxide layer deposited on the substrate and formed from a high-k dielectric material, a first metal layer deposited on the gate oxide layer and formed from a nitride of a metal of the high-k dielectric material of the gate oxide layer, a second metal layer deposited on the first metal layer, a third metal layer deposited on the second metal layer, and a material layer deposited on the third metal layer, wherein the material layer taken together with the first, second and third metal layers forms a gate electrode. Because any chemical reaction between the gate oxide layer and the metal layer can be controlled, deterioration of the capacitance equivalent oxide thickness) and leakage of current are prevented, and a semiconductor device having improved insulation can be provided.
|
