Method for manufacturing quasi-substrate wafer, which is used in manufacturing semiconductor body, involves connecting epitaxial growth substrate wafer with auxiliary support wafer

摘要

The method involves connecting an epitaxial growth substrate wafer (1) with an auxiliary support wafer (4). A main surface (101) of the epitaxial growth substrate wafer points at the auxiliary support wafer. A component opposite to the auxiliary support wafer of the epitaxial growth substrate wafer is separated along the separating area (2) out of sight of the separating area.