发明名称 |
Field effect transistor |
摘要 |
A field effect transistor with a high withstand voltage and a low resistance is provided. A ring-shaped channel region is disposed inside a source region formed in a ring, and the inside of the channel region is taken as a drain region. A depletion layer extends toward the inside of the drain region, resulting in a high withstand voltage. In the portion, except the portion within a prescribed distance from the corner portion of the channel region, a low resistance conductive layer is disposed, thereby resulting in high withstand voltage. |
申请公布号 |
EP1184908(A3) |
申请公布日期 |
2007.08.01 |
申请号 |
EP20010118110 |
申请日期 |
2001.07.26 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
MIYAKOSHI, NOBUKI;MATSUBARA, TOSHIKI;NAKAMURA, HIDEYUKI |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/08;H01L29/10;H01L29/423;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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