发明名称 Method for controlling time point for data output in synchronous memory device
摘要 Disclosed is a method for controlling a time point for data output in a synchronous memory device, which varies a time point of an internal read command of the synchronous memory device, which is generated in response to an external read command according to the CAS latency of the synchronous memory device. In other words, the time point to generate the internal read command when CAS latency corresponds to 2N+2 (N=0, 1, 2, . . . ) is delayed by 1tCK as compared with the time point to generate the internal read command when CAS latency corresponds to 2N+1, and the 1tCK is a period of an external clock applied to the synchronous memory device.
申请公布号 US7251191(B2) 申请公布日期 2007.07.31
申请号 US20050194934 申请日期 2005.08.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE HYUN WOO
分类号 G11C8/00;G11C7/10;G11C7/22;G11C11/4076;G11C11/4096 主分类号 G11C8/00
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