SEMICONDUCTOR DEVICE HAVING HYDROGEN BARRIER LAYER AND FABRICATING METHOD THEREOF

摘要

A semiconductor device and its manufacturing method are provided to prevent the generation of bubble defects due to hydrogen atoms of a lower insulating layer and to prevent the delamination of an upper insulating layer by interposing a hydrogen barrier layer between the upper and the lower insulating layers. A substrate with a metal line is prepared(10). A lower insulating layer for enclosing the metal line is formed on the substrate by using a high density plasma CVD(15). A hydrogen barrier layer is formed on the lower insulating layer by using in-situ processing(30). An upper insulating layer is formed on the hydrogen barrier layer(45).