| 摘要 |
A ferroelectric memory capacitor is formed by forming a barrier layer, a first metal layer, a ferroelectric layer, a second metal layer, and a hard mask layer, on dielectric layer ( 70 ). Using the patterned hard mask layer ( 255 ), the layers are etched to form an etched barrier layer ( 205 ), and etched first metal layer ( 215 ), and etched ferroelectric layer ( 225 ), and etched second metal layers ( 235, 245 ). The etched layers form a ferroelectric memory capacitor ( 270 ) with sidewalls that form an angle with the plane of the upper surface of the dielectric layer ( 70 ) between 78° and 88°. The processes used to etch the layers are plasma processes performed at temperatures between 200° C. and 500° C.
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