| 摘要 |
A fuse of a semiconductor device and its forming method are provided to improve the yield of the device by preventing the fail of the fuse due to cracks generated at an edge portion of a fuse box using a crack preventing trench. A sacrificial oxide layer(17) and a hard mask layer are sequentially formed on a semiconductor substrate(11) with a lower structure. The substrate is defined with a cell region(A) and a peripheral region(B). A first photoresist pattern for exposing the cell region to the outside is formed on the hard mask layer. A hard mask pattern is formed by etching selectively the hard mask layer using the first photoresist pattern as an etch mask. The first photoresist pattern is removed therefrom. A second photoresist pattern is formed on the resultant structure. A storage electrode node region and a crack preventing trench are formed on the resultant structure by etching partially the hard mask pattern and the sacrificial oxide layer using the second photoresist pattern as an etch mask. A capacitor lower electrode layer(31) and a fuse lower electrode layer(33) are formed in the storage electrode node region and the crack preventing trench, respectively.
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