发明名称 |
MOS transistor having a T-shaped gate electrode |
摘要 |
A MOS transistor having a T-shaped gate electrode and a method for fabricating the same are provided, wherein the MOS transistor includes a T-shaped gate electrode on a semiconductor substrate; an L-shaped lower spacer disposed at both sides of the gate electrode to cover a top surface of the semiconductor substrate; and low-, mid-, and high-concentration impurity regions formed in the semiconductor substrate of both sides of the gate electrode. The high-concentration impurity region is disposed in the semiconductor substrate next to the lower spacer and the mid-concentration impurity region is disposed between the high- and low-concentration impurity regions. A MOS transistor according to the present invention provides a decrease in a capacitance, a decrease in a channel length, and an increase in a cross-sectional area of the gate electrode. At the same time, the mid-concentration impurity region provides a decrease in a source/drain resistance R<SUB>sd</SUB>.
|
申请公布号 |
US7250655(B2) |
申请公布日期 |
2007.07.31 |
申请号 |
US20030659384 |
申请日期 |
2003.09.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE GEUM-JONG;LEE NAE-IN;RHEE HWA-SUNG;KIM SANG-SU;LEE JUNG-II |
分类号 |
H01L21/334;H01L29/76;H01L21/28;H01L21/336;H01L29/78;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/334 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|