NANOWIRE ELECTROMECHANICAL SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTROMECHANICAL MEMORY DEVICE USING THE NANOWIRE ELECTROMECHANICAL SWITCHING DEVICE

摘要

A nano wire electromechanical switching device and its manufacturing method, an electromechanical memory device using the same are provided to acquire stable on-off switching characteristics and low voltage driving characteristics from a portion between two nano wires. Source and drain electrodes(14,15) are spaced apart from each other on an insulating substrate(12). A first nano wire(24) is vertically grown on the source electrode. A first voltage is applied to the first nano wire. A second nano wire(25) is vertically grown on the drain electrode. A second voltage is applied to the second anon wire. A gate electrode(50) is spaced apart from the second nano wire. The gate electrode encloses the second nano wire. The gate electrode has an opening structure corresponding to the first nano wire to prevent the gate electrode from functioning as an obstruction in an inter-switching operation between first and second nano wires. A switching process is performed by contacting or non-contacting the first and second nano wires using an electrostatic force between the first and the second nano wires and the gate electrode and an elasticity of the second nano wire.